MEMC, Ibis plan SOI development with 'defect-free' wafers
ST. PETERS, Mo.--MEMC Electronic Materials Inc. here today announced an agreement with Ibis Technology Corp. to develop advanced silicon-on-insulator wafer substrates using separation-by-implantation (SIMOX) techniques.
Silicon wafer manufacturer MEMC has been a global sales representative for SOI substrates produced by Ibis, and the new agreement extends that relationship to development of SIMOX silicon-on-insulator wafers for IC fabrication. The new development alliance aims to boost device performance and fab yields through improvements in defect density using MEMC's new series of "defect-free" silicon wafer substrates, called Optia (see Jan. 30 story).
"Every SIMOX-SOI wafer begins with a silicon substrate, and MEMC offers what may be the most technically advanced silicon wafers available today," said Martin J. Reid, president and chief executive officer of Ibis in Danvers, Mass. "We believe that the combination of MEMC's unique strengths in silicon substrates, including their recently announced Optia defect-free silicon wafer, with our unique strengths in manufacturing SIMOX-SOI wafers will lead to major advancements in SOI products."
The Ibis CEO noted that the alliance comes at a time when a number of major semiconductor manufacturers are moving to SOI wafers for high-performance products. The buried oxide layer in SOI acts as a barrier, which reduces electrical leakage from the transistors and results in devices that are faster and more power efficient.
The new agreement is "one more step toward our licensing and manufacturing of SIMOX-SOI products," said Klaus von Horde, president and CEO of MEMC in St. Peters. "We are already witnessing the synergy of our two companies in our joint activities." |
