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Technology Stocks : Intel Corporation (INTC)

INTC 36.50

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1:36 PM EST

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To: Dave who wrote (160450)	2/27/2002 11:38:21 AM
From: cordob	Read Replies (1) of 186894

Wasn't what I was thinking but is still possible. I think more of the mirror bit technology itself. However w/o more info from Saifun it is difficult to determine and I have not the (online) time to pursue this. I posted on tmf: boards.fool.com Had a look at the saifun website to see what this might be about. Looks like they have something similar to mirror bit flash and that might be the claim: saifun.com he Saifun NROM cell is a charge trapping memory device, which can be seen as a simple sub-micron MOS transistor whose gate oxide is replaced with a thin oxide-nitride-oxide (ONO) multi-layer, as shown in Fig. 1. The intermediate layer, i.e. the nitride, is the retaining material for two distinguishable pockets of electrons, close to the bit line (BL) junction edge. This cell also contains Arsenic implant for bit lines and Tungsten-Silicone and Polysilicon for word lines (WLs). for a picture of the thingy: saifun.com and saifun.com Maybe somebody with more knowledge about flash (mirror bit) can shed some light onto this. Cheers Cor

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