re: Samsung 512Mb Mobile-SDRAM
>> Industry``s First 3G low-power 512Mb Mobile-SDRAM
9th April 2002
3G
Samsung Electronics Co. Ltd., the industry leader in advanced semiconductor memory technology, has started to introduce samples of the industry``s first low-power 512Mb Mobile-Synchronous DRAM (SDRAM) for next- generation mobile devices.
Due to its small footprint and lower power consumption, Samsung``s new lightweight device is ideal for next generation mobile devices which require small chips. Applications include 3G mobile handsets, PDAs and digital cameras.
Samsung``s new device operates on a low 2.5 volts unlike conventional, low- power SDRAM chips, which operate on 3.3 volts. In standby mode, the power consumption is half that of conventional SDRAM devices. This is the result of two added functions: - A Partial Array Self Refresh (PASR) function ensures that the self-refresh operation occurs only in the bank(s) containing data.
- A Temperature Compensated Self-Refresh (TCSR) function adjusts the refresh speed according to the temperature of the device.
Samsung``s new SDRAM is available in small footprint, BGA, chip scale packages with a space saving of 50 percent compared to TSOP packages. Two bus configurations are also available: a 16-bit bus in a 54-ball BGA package and a 32-bit bus in a 90-ball BGA package.
Samsung has a tradition of leadership in the SDRAM market. Most recently, it became the first company to submit low-power DRAM specifications to JEDEC. These specifications have been formally adopted as the industry standard. Currently, Samsung is a top contributor to JEDEC for the creation of low-power SDRAM specifications.
Earlier this year, the company started mass production of Mobile-SDRAM in 64Mb, 128Mb and 256Mb densities. Samsung aims to have 50 percent of the Mobile- SDRAM market by 2003.
Advanced mobile devices such as PDAs are one of the fastest growing market sectors. Market watcher Dataquest has forecast that the global PDA market is likely to grow from 15 million units this year to 30 million units by 2005, an annual growth of 25%.
Samples of Samsung``s new 512Mb Mobile-SDRAM device (part number K4S51163LC) are available now through distribution. <<
- Eric - |
