Uniroyal Technology Corporation's Sterling Semiconductor Awarded $ 9 Million For Silicon Carbide Semiconductors
-- PR Newswire, 5/23/2002
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Uniroyal Technology Corporation (Nasdaq: UTCI) today announced that its subsidiary, Sterling Semiconductor, Inc., has been awarded contracts for approximately $ 9 million with the U.S. Department of Defense for the development of advanced silicon carbide (SiC) semiconductors.
The contracts are funded by the Defense Advanced Research Projects Agency (DARPA) for the development of improved 3 and 4-inch silicon carbide substrates, advanced SiC epitaxy, and SiC semiconductor devices. The two-year contracts include initiatives for the development of conducting substrates for high power electronics and semi-insulating substrates for high frequency electronics for communications and radar. The contracts are administered by the U.S. Air Force Research Laboratory in Dayton, Ohio.
"Our contract bid to DARPA responded to their requirements for the basic materials needed to develop military systems of the future. At the same time, Sterling expects that its research under the contracts will lead to significant commercial applications," said Robert L. Soran, President and Chief Operating Officer of Uniroyal Technology Corporation. "The selection of Sterling for an award recognizes the R&D capabilities of its scientists and engineers as well as the people and production capacity we have recently added to bring new products to market."
Sterling, a leading producer of silicon carbide materials, recently announced the introduction of its 3-inch diameter 6H polytype silicon carbide substrates, a significant milestone in Sterling's wafer development program. Sterling was also named recently, for the second consecutive year, to the "Fast 50" list of most rapidly growing companies based in the Washington, D.C. metropolitan area. |
