Varian Semiconductor Achieves Number One Market Share Position
VLSI Research Data Confirms VSEA's Top Position as Global Leader in Ion Implanter Sales
GLOUCESTER, Ma.--(BUSINESS WIRE)--July 16, 2002--Varian Semiconductor Equipment Associates, Inc. (Nasdaq: VSEA - News), today announced it has once again captured the number one market share position in ion implanter sales, according to a report released by VLSI Research, Inc. for calendar year 2001.
"Our VIISta platform of single wafer ion implantation systems continues to give us the edge in both the 200mm and 300mm market," remarked Richard A. Aurelio, Varian Semiconductor's chairman and chief executive officer. "Our customers' acceptance of the throughput advantages and economic benefits of our VIISta single wafer platform is reflected in our market share leadership position."
The VLSI Research report shows that Varian Semiconductor has again achieved over 70 percent market share in the sales of medium current ion implanters. "By leveraging our single wafer process advantages, we have been able to maintain our lead in the medium current segment," continued Aurelio. "The VLSI Research market share results clearly demonstrate the performance advantages of the VIISta platform's single wafer technology. Advanced fabs are recognizing the production advantages of single wafer processing that will be essential for making the next generation of integrated circuits."
The VIISta platform of parallel beam, single wafer ion implanters covers the entire range of ion implantation requirements, from 200eV through 3.75 MeV. The benefits derived from the parallel beam systems center around the precise placement of dopants in the device structures. Each ion implanter in the platform offers specific advantages in terms of integrated circuit performance.
For high current, the VIISta 80 presents an opportunity to improve junction abruptness control and increase the drive current and processing speed. For medium current, the VIISta 810 provides exceptional control of the Vt and halo implants, improving the consistency of operating characteristics and yield across the wafer. For high energy, the VIISta 3000 provides additional accuracy in the placement of dopant species to enhance well-to-well isolation characteristics, reducing the size of the transistors and increasing the number of integrated circuits on the wafer. The VIISta P2LAD ultra low energy ion implanter combines pulsed-plasma doping with the VIISta platform functionality to overcome the significant technical challenges posed by the requirements of low energy doping for ultra shallow junctions.
About VLSI Research Inc.
VLSI Research Inc. was founded in 1976 and incorporated in California in 1981. The company specializes in market research and economic analysis on the technical, business, and economic aspects of the high technology semiconductor manufacturing industry. Its numerous contacts within the semiconductor industry provide sharply focused insight into emerging requirements.
The success of VLSI Research Inc. is due to its reputation for unparalleled accuracy and innovation in market research. Its databases on manufacturing are used throughout the industry, and by government. It is often quoted by the press. Since the early eighties it has been the only market research firm to consistently gauge the direction of growth. Its innovations include being the first to use demand-based forecasting; the first to model semiconductor inventories in forecasts; the first to use cost-of-ownership models for evaluating equipment; the first to perform customer satisfaction surveys; the first semiconductor industry research firm to apply desktop publishing; and the first to provide portable research. VLSI Research offers subscription services, multi-client surveys, and provides consulting on a contract basis. The company is located in San Jose California and can be reached at (408) 453-8844.
About Varian Semiconductor
Varian Semiconductor Equipment Associates is the leading producer of ion implantation equipment used in the manufacture of semiconductors. The company is headquartered in Gloucester, Massachusetts, and operates worldwide. Varian Semiconductor maintains a web site at www.vsea.com. The information contained in the company's web site is not incorporated by reference into this release, and the web site address is included in this release as an inactive textual reference only.
Note: This release contains forward-looking statements for purposes of the safe harbor provisions under The Private Securities Litigation Reform Act of 1995. For this purpose, the statements concerning the company's expectations regarding the customer discussed in this release, market share and technology leadership, technological capabilities and benefits are forward-looking statements and any statements using the terms "believes," "anticipates," "expects," "plans," or similar expressions are forward-looking statements. There are a number of important risks and factors that could cause actual events to differ materially from those suggested or indicated by such forward-looking statements. These include, among others, volatility in the semiconductor equipment industry; economic conditions in general and as they affect the company's customers; significant fluctuations in the company's quarterly operating results; the impact of rapid technological change; the company's dependence on the development and introduction of new products; the company's concentration on ion implantation systems and related products; concentration in the company's customer base and lengthy sales cycles; the highly competitive market in which the company competes; risks of international sales; foreign currency risks; and general economic conditions; and other factors identified in the company's Annual Report on Form 10-K, and the most recent Quarterly Reports on Form 10-Q filed with the Securities and Exchange Commission. The company cannot guarantee any future results, levels of activity, performance or achievement. The company undertakes no obligation to update any of the forward-looking statements after the date of this press release. |
