Microsemi Introduces Two New Photodiode Families for Datacom/Telecom Broadband Applications
-- Coplanar Waveguide Photodiodes and Arrays Suited for Flip Chip or Wire Bond Assembly
IRVINE, Calif.--(BUSINESS WIRE)--July 17, 2002-- -- Designed Using Advanced Gallium Arsenide and Indium Gallium
Arsenide Fabrication Process
-- Higher Performance 50-Ohm Characteristic Impedance
-- Large Bond Pads Cut Customer Assembly Costs
Microsemi Corp. (Nasdaq:MSCC - News), a leading manufacturer of analog and mixed signal integrated circuits, has announced two new coplanar waveguide (CPW) photodiode families targeting applications in 1/10 Gigabit Ethernet, Fibre Channel, Infiniband, VCSEL and SONET/SDH OC48 and OC192 systems.
The two photodiode families -- designed using advanced gallium arsenide (GaAs) and indium gallium arsenide (InGaAs) fabrication technology -- provide a choice of single die or photodiode arrays, targeting 850 nanometer and 1310/1550 nanometer optical wavelengths for applications using 3.125, 10, or 12.7 Gbps data rates.
"Because these photodiodes are designed with easier assembly in mind -- to cut production costs -- we see the LX304x(TM) and LX305x(TM) Series as providing attractive choices for manufacturers of broadband systems equipment," said Paul Bibeau, Microsemi vice president of corporate marketing.
The new photodiodes feature 75 nanometer square anode and cathode pads that facilitate faster and more reliable self-alignment for either wirebond or flip chip assembly. Their impressive performance results, in part, from a 50-Ohm characteristic impedance-matched design that minimizes electrical reflections and noise.
"These two new photodiode families complement our planned portfolio of communications products that will include transimpedance amplifiers and laser drivers for both datacom and telecom applications," added Glen Hartman, Microsemi communications products marketing manager.
The LX3044(TM) single 10Gbps photodiode, the LX3045(TM) 10Gbps 1x4 array, and the LX3046(TM) 10Gbps 1x12 array are designed using GaAs for 850 nanometer wavelength for datacom applications including VCSEL laser and optical backplane.
Targeting datacom and telecom applications that include Metro and Enterprise 10GBE systems, are Microsemi's new 1310/1550 nanometer wavelength single-die InGaAs photodiodes: the LX3051(TM) -- a 3.125Gbps/80 micron aperture device; and the LX3050(TM) -- a 12.7Gbps/32 micron aperture device. The LX3052(TM) provides a 12.7Gbps/32 micron aperture 1x4 array for these same applications.
Bare die LX304x Series photodiode prices start at $15 in 1K quantities and 1x4 arrays at $50 in like quantities. LX305x bare die photodiodes start at $35 and 1x4 arrays at $250, again in 1K quantities.
Complete technical information is available on the Microsemi Web site, www.Microsemi.com. Die samples can be ordered through this site, or from Microsemi sales representatives and franchised distributors.
About Microsemi
Microsemi is a leading designer, manufacturer and marketer of analog, mixed-signal and discrete semiconductors. The company's semiconductors manage and regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.
Microsemi products include individual components, as well as complete circuit solutions that enhance customer designs by providing battery optimization, reducing size or protecting circuits. Markets the company serves include mobile connectivity, computer/peripherals, telecommunications, medical, industrial/commercial, space/satellite and military.
More information may be obtained by contacting the company directly or by visiting its Web site at microsemi.com.
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Contact:
Microsemi Corp., Irvine
David R. Sonksen (investors), 949/221-7101
or
Cliff Silver (editorial), 949/221-7112 |
