New Vishay Siliconix Power MOSFETs for Battery Protection Set New Records for On-Resistance in Three Package Types
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SANTA CLARA, Calif.--(BUSINESS WIRE)--Aug. 7, 2002--Siliconix incorporated (Nasdaq: SILI), an 80.4 percent-owned subsidiary of Vishay Intertechnology Inc. (NYSE: VSH), Wednesday announced five new n-channel TrenchFET power MOSFETs aimed at battery-protection applications in one- and two-cell lithium-ion and lithium-polymer battery packs and circuitry.
Among the devices released today are two new chipscale power MOSFETs that provide industry-low on-resistance-per-footprint area. For applications that require the lowest possible on-resistance, Vishay Siliconix provides the MICRO FOOT Si8900EDB, which features an on-resistance of just 24 milliohms at a 4.5-V gate drive and an average footprint area of 8.07 square mm.
If a smaller design is more important, the MICRO FOOT Si8902EDB offers on-resistance of 45 milliohms at a 4.5-V gate drive in an average footprint area of 3.68 square mm.
These new bidirectional 20-V MICRO FOOT devices feature a profile of just 0.62 mm and fit easily on slim PCBs required in narrow, handheld electronics. MICRO FOOT devices save space by relying on a solder bump process and proprietary techniques developed at Siliconix to eliminate the need for an outer package to encase the power MOSFET die. Both the Si8900EDB and Si8902EDB provide 4,000-V ESD protection.
In applications such as wall adapters that require a 30-V device, the new bidirectional Si6876EDQ power MOSFET offers low on-resistance -- just 30 milliohms at a 4.5-V gate drive -- in a TSSOP-8 package. When a lower breakdown voltage is acceptable, the 20-V Si6880EDQ provides a still lower on-resistance of 18 milliohms at a 4.5-V gate drive and is specified for operation down to 1.8 V.
The Si6880EDQ also is available in the TSSOP-8 package. Both devices feature ESD protection of 4,000 V.
For applications demanding enhanced thermal performance, the 30-V Si7902EDN dual common-drain power MOSFET is available in a PowerPAK 1212-8 package with a low profile of just 1.07 mm and a footprint area of just 10.56 square mm -- about half the size of the TSSOP-8. The Si7902EDN features an on-resistance value of 28 milliohms at a 4.5-V gate drive and 3,000-V ESD protection.
The new common-drain devices provide two essential battery-protection functions: protecting against over-current and over-voltage conditions during charging and, with a reverse blocking function, preventing discharge back into the ac source once the battery is fully charged.
Their extraordinarily low on-resistance helps to prolong battery life, extending talk and stand-by times in compact portable equipment including cell phones, pagers, and PDAs.
Data sheets for the new devices are available now from the MOSFETs area of the Vishay Web site or direct from the following URLs:
vishay.com (Si6876EDQ) vishay.com (Si6880EDQ) vishay.com (Si7902EDN) vishay.com (Si8900EDB) vishay.com (Si8902EDB)
All five of the new power MOSFETs are rated for operation over a temperature range of -55 to +150 degrees Celsius.
Samples and production quantities of the Si8900EDB, Si8902EDB, Si6876EDQ, Si6880EDQ, and Si7902EDN are available now, with lead times of 12 weeks for larger orders.
Siliconix, a company of Vishay Intertechnology Inc., is a leading manufacturer of power MOSFETs, power ICs and analog switches for computers, cell phones, fixed communications networks, automobiles and other electronic systems.
With 2001 worldwide sales of $305.6 million, the company's facilities include a Class 1, 6-inch wafer fab dedicated to the manufacture of power products in Santa Clara, and an affiliated Class 1, 6-inch wafer fab located in Itzehoe, Germany. Power products are also manufactured by a subcontractor in Japan.
Analog switches, analog multiplexers, and low-power transistors are fabricated by subcontractors in Dresden, Germany and in Beijing, China. Assembly and test facilities include a company-owned facility in Taiwan, a joint venture in Shanghai, China, and subcontractors in the Philippines, China, and the United States. |
