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Texas Instruments Eyes Embedded FRAM as Next Generation Non-Volatile Memory Technology
Thursday November 7, 6:57 am ET
FRAM Cells Use Less Power and Cost Less to Produce Than Alternatives
DALLAS, Nov. 7 /PRNewswire-FirstCall/ -- Texas Instruments Incorporated (NYSE: TXN - News; TI) has produced a 64 Megabit Ferroelectric RAM (FRAM) chip within a standard CMOS logic process, validating the technology as a cost- effective alternative to embedded Flash and embedded DRAM in a variety of applications. Embedding memory on the same chip as the processor, peripherals and other components will reduce system chip count and complexity, increase system performance and increase security of the data. TI views FRAM as having advantages over other embedded memory options, including FRAM's low cost to manufacture and low power consumption. The 64 Megabit FRAM device produced by TI also has the smallest FRAM cells ever reported, a mere 0.54um(2).
"Texas Instruments has made a major step forward in the development of FRAM as a next generation embedded non-volatile memory that allows them to integrate very dense memory cells with logic using a standard CMOS process," said G. Dan Hutcheson, President of VLSI Research Inc. "Using embedded FRAM in portable applications is very attractive because it can be produced with fairly simple additions to the manufacturing process and yet offers the promise of a cost, power, and performance sweet spot that will be hard for other non-volatile memory technologies to match."
FRAM for Embedded Applications
FRAM's fast access time, low power dissipation, small cell size and affordable manufacturing cost means it can be used for both program and data applications, making it well suited for wireless applications. Other potential market applications include broadband access, consumer electronics and TI's extensive catalog of programmable DSPs.
"We believe FRAM has the potential to become an ideal non-volatile memory option for a wide range of applications in the 2005 timeframe," said Hans Stork, senior vice president and director of TI's silicon technology development. "This demonstrates that semiconductor materials research coupled with innovative product design can deliver revolutionary advances, and TI believes FRAM can change the product dynamics in embedded memory."
TI's initial FRAM test chips were produced using TI's standard 130nm, copper-interconnect process with only two additional mask steps. The 1.5-volt chips demonstrate the smallest FRAM cells shown-to-date, measuring only 0.54um(2), a much greater memory density than the SRAM cells on the same chip. At the 90nm process node, the generation where TI's first embedded FRAM products are expected to appear, the FRAM cells will be even smaller, a mere 0.35um(2). FRAM memory combines the fast access and low-power qualities of volatile DRAM with the ability to retain data without power. Other non- volatile memories such as EEPROM and Flash are more expensive to build because of the multiple mask steps they require, have longer write times, and use more power to write data.
How FRAM Works
At the core of FRAM technology are tiny ferroelectric crystals integrated into a capacitor that allow FRAM products to operate like fast nonvolatile RAMs. The electric polarization of the ferroelectric crystals is shifted between two stable states by the application of an electric field. The direction of this electric polarization is sensed by internal circuits as either a high or a low logic state. Each orientation is stable and remains in place even after the electric field is removed, preserving the data within the memory without periodic refresh.
TI fabricates planar FRAM cells using a capacitor-on-plug approach and a 1 Transistor-1 Capacitor (1T-1C) architecture to minimize cell area. The ferroelectric capacitor is formed using Iridium electrodes and a thin Lead Zirconate Titanate (PZT) ferroelectric layer.
In August of 2001, TI entered into a multi-million dollar FRAM memory licensing and development agreement with U.S. semiconductor maker Ramtron International Corporation (Nasdaq: RMTR - News) that ultimately resulted in TI successfully producing the 64 Megabit FRAM device. Ramtron will focus their use of the jointly developed technology on stand-alone memory products. Additional technical details on TI's FRAM technology will be presented during the International Electron Devices Meeting (IEDM) December 8-11 in San Francisco, CA.
Safe Harbor Statement
Statements contained in this press release regarding the future capabilities and benefits of FRAM technology and other statements of management's beliefs, goals and expectations may be considered "forward- looking statements" as that term is defined in the Private Securities Litigation Reform Act of 1995, and are subject to risks and uncertainties that could cause actual results to differ materially from those expressed or implied by these statements. The following factors and the factors discussed in TI's most recent Form 10-K could cause actual results to differ materially from the statements contained in this press release: delays in implementation of the technology or cancellation of the technology development. We disclaim any intention or obligation to update any forward-looking statements as a result of developments occurring after the date of this press release.
About Texas Instruments
Texas Instruments Incorporated provides innovative DSP and analog technologies to meet our customers' real world signal processing requirements. In addition to Semiconductor, the company's businesses include Sensors & Controls, and Educational & Productivity Solutions. TI is headquartered in Dallas, Texas, and has manufacturing, design or sales operations in more than 25 countries.
Texas Instruments is traded on the New York Stock Exchange under the symbol TXN. More information is located on the World Wide Web at www.ti.com .
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