Cree Announces World's First Wide Bandgap MMIC Foundry Service
Monday June 9, 7:25 am ET
DURHAM, N.C., June 9 /PRNewswire-FirstCall/ -- Cree, Inc. (Nasdaq: CREE - News), announced today that it plans to offer silicon carbide (SiC) monolithic microwave integrated circuit (MMIC) foundry service to U.S. customers based on its second generation, 3-inch SiC MESFET production process. Initial foundry and engineering support services will include custom design solutions using Cree's internal MMIC design staff, which will be followed by the support of external customer designs using standard device models and layout rules by the end of calendar 2003. The advanced MMIC process will enable the incorporation of integral resistors, capacitors, and through-substrate vias on a single RF integrated circuit (IC) reducing the parts count required for high power amplifiers. Typical applications for these circuits include high power, wide bandwidth amplifiers for radar, electronic warfare, cellular infrastructure, and homeland defense.
"We have received significant interest in Cree providing this type of foundry service, and are pleased to begin offering it to U.S. based companies for domestic use," stated Jim Milligan, Cree's Manager of Wide Bandgap Microwave Products. "In addition to providing unmatched RF performance, this advanced service will allow external customers the ability to design into our SiC MMIC process using their own proprietary circuit designs and architectures. Cree is the only company to commercially offer the higher power, wider bandwidth capability of SiC compared to silicon or gallium arsenide (GaAs) in a MMIC format." |
