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Technology Stocks : Wolf speed
WOLF 18.09-1.7%9:37 AM EST

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To: w2j2 who started this subject6/10/2003 10:28:29 AM
From: straight life   of 10714
 
Cree Microwave Announces Entry into the LDMOS Avionics and Radar Markets at MTT Show in Philadelphia
Tuesday June 10, 8:03 am ET

DURHAM, N.C., June 10 /PRNewswire-FirstCall/ -- Cree Microwave, Inc., a subsidiary of Cree, Inc. (Nasdaq: CREE - News), announced today that it will make its initial product entry into the LDMOS avionics and radar markets at the 2003 IEEE MTT-S International Microwave Symposium being held at the Pennsylvania Convention Center in Philadelphia June 8-13, 2003. Cree Microwave is located in Booth 1149 at the Convention Center.
Cree Microwave has developed a pulsed LDMOS die architecture that is designed to provide the required performance for avionics and radar markets in our new devices designed specifically for L-Band avionics applications. The company is currently sampling these devices. In addition, Cree Microwave will provide a live demonstration of a 300-watt LDMOS FET designed for TACAN/IFF operation. These new devices leverage the work previously completed on the LDMOS 8 technology for the cellular infrastructure market and we believe they provide significant cost and performance advantages compared to current technologies.

John Quinn, Vice President, Cree Microwave stated, "We have made significant progress on our pulsed LDMOS product portfolio and are very excited to make our first entry into the avionics and radar market. The RF power characteristics for devices needed for new systems are changing, and we believe that LDMOS devices offering linear pulse amplification are the best option commercially available today."

Cree Microwave designs, manufactures and markets a complete line of high- quality, customizable and cost-effective radio frequency (RF) power semiconductors, the critical component utilized in building wireless power amplifiers for cellular and personal communications services (PCS) infrastructure. The company designs and manufactures laterally diffused metal-oxide silicon (LDMOS) and bipolar power semiconductors for operation up to 2.4 GHz, as well as wide bandgap semiconductor RF power devices. Cree Microwave's operating headquarters are at 160 Gibraltar Court, Sunnyvale, California 94089. For more information on Cree Microwave, please visit www.creemicrowave.com or call Cree Microwave at 408-745-5700.

This press release contains forward-looking statements involving risks and uncertainties, both known and unknown, that may cause actual results to differ materially from those indicated. Actual results could differ materially due to a number of factors, including the risk we may encounter delays or other difficulties in ramping up production of the new products; the possibility we may be unable to manufacture such products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the rapid development of new technology and competing products that may impair demand; the potential lack of customer acceptance for the products; risks associated with the commercial release of new products under development, including the possibility we will be unable to develop and manufacture commercially viable versions of such products; and other factors discussed in Cree's filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 30, 2002 and subsequent reports filed with the Commission.

Cree and the Cree logo are registered trademarks of Cree, Inc.

biz.yahoo.com

source: Cree, Inc.
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