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Technology Stocks : Energy Conversion Devices

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To: Krowbar who started this subject	12/9/2003 11:30:17 AM
From: mred5x5	Read Replies (2) of 8393

More from 2004 ISSCC At Session 2 'Non-Volatile Memory Session' includes: 2.1 ' A 0.18um 3V 64Mb Non-Volatile Phase-Transition Random Access Memory' paper Authors from Samsung Electronics Abstract: "A non-volatile 64Mb phase-transistion RAM is developed by fully integrating a chalcogenide alloy GST (Ge2Sb2Te5) into 0.18um CMOS technology. This alloy is programmed by resistive heating. To optimize SET/RESET distribution, a 512kb sub-core architecture, featuring meshed ground line, is proposed. Random read access and write access for SET/RESET are 60ns, 120ns and 50ns, respectively, at 3.0V and 30C." My comments: Further suggesting Samsung's intense interest in PCM (OUM). The 64Mb is the largest REPORTED array to date for this technology. JV soon with Ovonyx? Ed

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