AMD to ramp up flash fabs, readies 110-nm devices
Silicon Strategies
12/09/2003, 5:55 PM ET
SUNNYVALE, Calif.--FASL LLC--the joint flash-memory venture between Advanced Micro Devices Inc. and Fujitsu Ltd.--plans to ramp up its fab capacity to meet the booming demand in the marketplace.
By the end of 2004, FASL said that more than 80 percent of its "leading-edge" capacity will involve 128-megabit flash-memory devices, based on its new 110-nm process technology. Over 60 percent of the company's total output will be directed towards these products.
FASL will ramp up two plants--Fab 25 and JV3. Fab 25 is on track to deliver greater than 30 percent higher wafer output in 2004, compared to its output as a logic fab. The 128-Mbit equivalent output on 110- and 130-nm from Fab 25 is planned to grow eight-fold by end of year 2004, compared to last quarter.
"The planned ramp of 110-nm technology through 2004 will support both our leading-edge floating gate technology and especially our second-generation, 110-nm MirrorBit," said Amir Mashkoori, group vice president and general manager of the Wireless Business Unit for FASL LLC, in a statement. AMD's floating-gate and MirrorBit products are based on NOR technology, it was noted.
"The inclusion of Fab 25 in FASL LLC together with JV1, JV2 and JV3 doubles our total capacity through 2004, establishing a manufacturing powerhouse in flash memory in support of our customers' business growth," said Bertrand Cambou, CEO and president of FASL LLC, in a statement. |
