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Technology Stocks : SOITEC, Silicon-On-Insulator TEChnologies

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To: kinkblot who started this subject	1/3/2004 4:56:39 PM
From: kinkblot	of 83

Spire; U.S. Patent No. 6,635,559 Formation of insulating aluminum oxide in semiconductor substrates spirecorp.com A method for forming insulating layers in Group III-V semiconductors. The basic idea as described in Claim 1 is a three step sequence: aluminum ion implant, oxygen ion implant, anneal or rapid thermal anneal. If aluminum is an atomic constituent of the substrate (e.g. GaAlAs), the relative doses of aluminum and oxygen are adjusted to take that into account, so that a stoichiometric ratio is achieved in the implanted region. In one embodiment, vertical insulating layers are created by multi-step implantation of ions at different energies and ion densities. So, is this just a paper patent or have they made working devices? WT

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