IBM, Chartered forge second-source deal at 90-nm
By Mark LaPedus
Silicon Strategies
01/14/2004, 4:00 PM ET
EAST FISHKILL, N.Y.--IBM Corp.'s Microelectronics Division and Singapore's Chartered Semiconductor Manufacturing Pte. Ltd. today (January 14, 2004) expanded their technology alliance, announcing a second-source deal at the 90-nm node.
Under the plan, Chartered will manufacture selected 90-nm, silicon-on-insulator (SOI) chip products for IBM. Chartered is expected to begin production of the 90-nm SOI parts in its 300-mm Fab 7 in Singapore by mid-2005.
"This manufacturing agreement, with our partner, Chartered, enables IBM to provide the dual sourcing clients want and the flexibility we need to meet increasing demand for our leading-edge technologies," said John E. Kelly III, senior vice president and group executive for IBM's Technology Group, in a statement.
This manufacturing agreement follows the joint development agreements signed by IBM and Chartered in November 2002. Under the initial agreements, the two companies are jointly developing 90- and 65-nm CMOS processes for foundry chip production on 300-mm silicon wafers and are engaged in a reciprocal manufacturing arrangement that provides dual-sourcing flexibility for their customers (see November 26, 2002 story). |
