Vishay Launches First Power MOSFETs to Combine WFET and TrenchFET Gen II Technologies for Exceptionally Low 6.5-nC Gate Charge and 3.6-Milliohm On-Resistance Values
Monday May 10, 8:01 am ET
biz.yahoo.com
SANTA CLARA, Calif.--(BUSINESS WIRE)--May 10, 2004--Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology Inc. (NYSE: VSH), today announced the release of the first two power MOSFETs to combine the extremely low gate charge values enabled by WFET® technology with the very low on-resistance values of TrenchFET® Gen II technology.
The two power MOSFETs released today are designed for low-side operation in synchronous buck (single- and multi-phase configurations) dc-to-dc converters in notebook PCs, servers, and VRM modules, as well as in synchronous rectification in fixed telecom systems.
The new Si4368DY (PowerPAK® SO-8) and Si7668DP (SO-8) feature on-resistance of 3.6 milliohms (at a 4.5-V gate drive) and a low on-resistance-times-gate charge value of 23 milliohms*nC for improvements of 25% and 54%, respectively, over specifications for competing MOSFET devices.
Both devices provide an exceptionally low gate charge ratio of 0.37 -- also 54% better than competing devices -- to ensure high "shoot-thru" immunity and to help keep gate charge in check for reduced switching losses and more efficient dc-to-dc converter performance. The maximum gate threshold voltage for the Si4368DY and Si7668DP is 1.8 V. Packaged in the thermally enhanced PowerPAK SO-8 package, the Si7668DP also offers lower thermal resistance and greater power dissipation.
Vishay's innovative WFET technology uses a thicker gate oxide at the bottom of the devices' silicon trench to reduce capacitance and gate charge with minimal impact on on-resistance performance, boosting the efficiency of dc-to-dc converters. With the release of the new devices, designers can now build an all-WFET dc-to-dc converter using the Si4368DY or Si7668DP on the low side and the previously announced Si4390DY or Si7390DP on the high side. The WFET power MOSFETs' low conduction and switching losses translate directly into a 2% improvement in dc-to-dc converter efficiency over competing solutions in typical applications.
By applying WFET technology to its latest high-density silicon in the Si4368DY and Si7668DP, Vishay achieves a transistor density of 300 million cells per square inch and a low specific on-resistance of 12 milliohms per square mm without compromising switching performance. As a result, the new devices enable design of faster, lighter, smaller, cooler, more efficient, and longer-running products with more robust feature sets. |
