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Technology Stocks : Energy Conversion Devices

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To: Michael Latas who wrote (7733)	6/16/2004 11:13:53 PM
From: Krowbar	of 8393

An 8Mb Demonstrator for High-Density 1.8V Phase-Change Memories Saturday, June 19, 10:20AM An 8Mb Non-Volatile Memory Demonstrator incorporating a novel 0.32 um2 Phase-Change Memory cell using a Bipolar Junction Transistor as selector and integrated into a 3V 0.18 um CMOS technology is presented. Realistically large 4Mb tiles with a voltage regulation scheme that allows fast bit-line precharge and sense, and an innovative approach that minimizes the array leakage are proposed. Cells distributions and first endurance measurements demonstrate the chip functionality and a good working window. Presented by STMicroelectronics st.com Del

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