20040115945 Using an electron beam to write phase change memory devices Lowrey, Tyler A. ; Hudgens, Stephen
Phase change memories may be made with relatively small pore sizes using electron beam lithography. An electrode may be covered with a relatively thin insulator, which may be patterned using direct write electron beam lithography.
The vias 20 may be formed having a diameter on the order of 80 to about 500 Angstroms in one embodiment.
20040115372 Vertical elevated pore phase change memory
Lowrey, Tyler A.
Abstract
A vertical elevated pore structure for a phase change memory may include a pore with a lower electrode beneath the pore contacting the phase change material in the pore. The lower electrode may be made up of a higher resistivity lower electrode and a lower resistivity lower electrode underneath the higher resistivity lower electrode. As a result, more uniform heating of the phase change material may be achieved in some embodiments and better contact may be made in some cases.
20040114419 Method and system to store information
Briefly, in accordance with an embodiment of the invention, a method and system to program a memory material is provided. The method may include applying three signals having different durations and different amplitudes to a memory material to program the memory material to a predetermined state.
Inventors: Lowrey, Tyler A.; Parkinson, Ward D.
10 20040114413 Memory and access devices
Briefly, in accordance with an embodiment of the invention, a memory is provided. The memory may include a memory element and a first access device coupled to the memory element, wherein the first access device comprises a first chalcogenide material. The memory may further include a second access device coupled to the first access device, wherein the second access device comprises a second chalcogenide material. Parkinson, Ward D.; Lowrey, Tyler A.
20040113192 Phase change memory and method therefor
Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a memory material and a first tapered contact adjacent to the memory material. The phase change memory may further include a second tapered contact separated from the first tapered contact and adjacent to the memory material, wherein the first and second tapered contacts are adapted to provide a signal to the memory material.
Inventors: Wicker, Guy C.; (Southfield, MI)
20040113181 Lateral phase change memory and method therefor
Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein the two electrodes are separated by a sub-lithographic distance. The method may further include forming a phase change material between the two electrodes.
Inventors: Wicker, Guy C.
20040113135 Shunted phase change memory
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may be sufficiently resistive that it heats the phase change material and causes the appropriate phase transitions without requiring a dielectric breakdown of the phase change material.
Inventors: Wicker, Guy
Del |
