CRAM 2004 IEDM PAPERS by SAMSUNG and STM
2:00 p.m.
37.2 Highly Manufacturable High Density Phase Change Memory of 64Mb and Beyond, S.J. Ahn, Y.J. Song, C.W. Jeong, J.M. Shin, Y. Fai, Y.N. Hwang, S.H. Lee, K.C. Ryoo, S.Y. Lee, J.H. Park, H. Horii*, Y.H. Ha*, J.H. Yi*, B.J. Kuh*, G.H. Koh, G.T. Jeong, H.S. Jeong,and K. Kim, Samsung Electronics, Kyunggi-Do, Korea
Highly manufacturable 64Mbit PRAM was successfully fabricated. To fabricate the mass productive high density PRAM, sharp SET and RESET resistance distributions for the scalable memory cell with low writing current were achieved. Functionality and reliability of the 64Mbit PRAM chip were evaluated by operation temperature dependency, disturbance, endurance, and retention.
2:25 p.m.
37.3 Electrothermal and Phase-Change Dynamics in Chalcogenide-Based Memories, A.L. Lacaita, A. Redaelli, D. Ielmini, F. Pellizzer*, A. Pirovano*, A. Benvenuti* and R. Bez*, DEI - Politecnico di Milano, Milan, Italy and *STMicroelectronics, Milan, Italy
The work presents a complete investigation of electrical conduction and phase transition in chalcogenide-based phase-change memories (PCMs). Simulation results provide evidence for tht tight coupling between electrical switching in the amorphous chalcogenide and crystallization. The phase distribution along the programming characteristics of PCMs is addressed. |
