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Technology Stocks : Advanced Micro Devices - Moderated (AMD)
AMD 236.78-6.1%3:59 PM EST

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From: etchmeister11/10/2004 2:59:04 PM
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"ORNAND" versus "oneNAND" Is Samsung leapfrogging both Intel and AMD?
Samsung shows 1-Gbit 'OneNAND' flash phone memory
By Peter Clarke
Silicon Strategies
11/10/2004, 4:58 AM ET

MUNICH, Germany — Samsung Electronics Co. Ltd. announced Wednesday (Nov. 10) the development of a 1-Gbit OneNAND Flash memory device implemented in a 90-nm manufacturing process technology.

The OneNAND device is a form of appication-specific memory aimed at unified storage on-board mobile phone handsets. It combines the high-speed data read function of NOR flash with the data storage density of NAND flash. The single chip is based on NAND architecture with integrated buffer memory and logic interfaces to allow sustained data transfers at up to 108-Mbyte per second, the company said.

Samsung has been using its position as leader in the DRAM and flash memory markets to try and set de facto standards in application-specific memory. Samsung's OneNAND flash was introduced in 2003 and has been designed in by more 10 companies. Applications include mobile handsets, PDA, DSC, DTV, game consoles, and navigator systems.

Featuring a 66-MHz synchronous interface and cache read function that enable an enhanced read performance of 108-Mbytes per second, the 1-Gbit OneNAND Flash boasts a four-fold read speed increase over conventional NAND Flash performance.

The OneNAND Flash solution is available separately or can be mounted together with a mobile synchronous DRAM in a multi-chip package. Placing two 1-Gbit OneNAND flash and one mobile SDRAM in a three-chip MCP, can satisfy the multimedia memory requirements of 3G mobile handsets, Samsung said.

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