Looks like 70nm production has moved to Fab 3!!!
-Pam
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Toshiba Announces 16-Gigabit Multi-Level Cell NAND Flash Component Using 70-Nanometer Process Technology
Highest Density Commercially Available MLC NAND Flash Component Provides
2-Gigabyte Data Storage Capacity
See TAEC Memory Products at CES in Toshiba Booths #12814 and #12827 in LVCC
Central Hall
LAS VEGAS, Jan. 5 /PRNewswire/ -- Continuing its commitment to a
leading-edge NAND flash roadmap to enable increasingly high density devices
for consumer applications, Toshiba America Electronic Components, Inc. (TAEC)*
today announced the availability of a 16-gigabit(1) (Gb) multi-level cell
(MLC) NAND flash memory component developed by Toshiba Corp. (Toshiba). The
new 16Gb NAND Flash part, designated TH58NVG4D4CTG, achieves 2 gigabytes(2)
(GB) of storage in a single thin, small-outline package (TSOP) by stacking two
70nm Toshiba 8Gb MLC NAND chips. The new part is ideal for solid-state file
storage applications including audio players, USB drives, memory cards,
streaming audio/video equipment and other applications requiring high-density
embedded memory at an attractive cost per bit.
"Our 16Gb NAND TSOP is based on the Toshiba 8Gb MLC NAND part which
features the industry's highest density in a single die NAND chip, which is
achieved by storing 2 bits per cell. As a result, Toshiba is able to offer
two-gigabyte storage capacity by stacking only 2 die in a TSOP package," said
Brian Kumagai, business development manager, NAND Flash, for TAEC.
The new 16Gb memory part is based on the Toshiba TC58NVG3D4CTG 8Gb MLC
NAND, which maximizes performance by using fast writing circuit techniques to
reduce data write times and supporting a fast write speed of 6-megabytes (MB)
per second(3). The 8Gb NAND chips, co-developed by Toshiba and SanDisk Corp,
are now in full production on 70nm production lines in an advanced wafer
fabrication facility at Toshiba Yokkaichi Works run by Flash Partners, Inc., a
joint venture of Toshiba and SanDisk.
The new parts are offered in Lead(Pb)-Free(4) surface mount packages with
tin-silver (Sn-Ag) or tin-copper (Sn-Cu) Lead(Pb)-Free plating and are
intended to be compatible(5) with the requirements of the European Union's
Restriction of Hazardous Substances (RoHS) Directive(6), which will take
effect in July 2006.
Product Specifications
Part Number TH58NVG4D4CTG
Configuration 2028M x 8 bits (16Gb)
Power Supply VCC = 2.7V to 3.6V
Page Size 2112 bytes
Max. Programming Speed 6MB/Second
Package 48-pin TSOP Type 1
Measures 12 x 20 x 1.2 millimeters
Pricing and Availability
Samples of the 16Gb Toshiba TH58NVG4D4CTG, 16Gb NAND Flash will be
available in January 2006, priced at $79.00 each.
NAND Flash Background
As a recognized pioneer in flash technology, Toshiba was a principal
innovator of NAND- and NOR-type Flash technology in the 1980's. Toshiba
maintains leadership in Flash technology today, with a complete line of NAND
memory in densities from 64megabits(7) (Mb) to 16Gb to meet various
application requirements. NAND Flash has become one of the leading
technologies for solid state storage applications because of its high-speed
programming capability, high-speed erasing, and low cost. The sequential
nature (serial access) of NAND-based Flash memory provides notable advantages
for these block-oriented data storage applications. Toshiba's NAND Flash
memory products are optimized for general solid state storage, image file
storage and audio for applications such as solid state disk drives, digital
cameras, audio appliances, set-top boxes and industrial storage.
*About TAEC
Combining quality and flexibility with design engineering expertise, TAEC
brings a breadth of advanced, next-generation technologies to its customers.
This broad offering includes memory and flash memory-based storage solutions,
a broad range of discrete devices, displays, medical tubes, ASICs, custom
SOCs, microprocessors, microcontrollers and wireless components for the
computing, wireless, networking, automotive and digital consumer markets.
TAEC is an independent operating company owned by Toshiba America, Inc., a
subsidiary of Toshiba Corp. (Toshiba), Japan's second largest semiconductor
manufacturer and the world's ninth largest integrated manufacturer of electric
and electronic equipment. In almost 130 years of operation, Toshiba has
recorded numerous firsts and made many valuable contributions to technology
and society. For additional company and product information, please visit
TAEC's website at chips.toshiba.com. For technical inquiries, please e-mail
Tech.Questions@taec.toshiba.com.
Information in this press release, including product pricing and
specifications, content of services and contact information, is current and
believed to be accurate on the date of the announcement, but is subject to
change without prior notice. Technical and application information contained
here is subject to the most recent applicable Toshiba product specifications.
In developing designs, please ensure that Toshiba products are used within
specified operating ranges as set forth in the most recent Toshiba product
specifications and the information set forth in Toshiba's "Handling Guide for
Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This
information is available at chips.toshiba.com, or from your TAEC
representative.
All trademarks and tradenames held within are the properties of their
respective holders.
(1) When used herein in relation to memory density, gigabit and/or Gb
means 1,024x1,024x1,024 = 1,073,741,824 bits. Usable capacity may be
less. For details, please refer to specifications.
(2) When used herein in relation to memory density, gigabyte and/or GB
means 1,024x1,024x1,024 = 1,073,741,824 bytes. Usable capacity may be
less. For details, please refer to specifications.
(3) Read and write speed may vary depending on the read and write
conditions, such as devices you use and file sizes you read and/or
write. (For purposes of measuring write speed in this context,
1 MB = 1,000,000 bytes).
(4) Toshiba defines "Lead(Pb)-Free" in accordance with current industry
standards as no more than 0.1 percent lead(Pb) by weight in homogenous
materials. This does not mean that Toshiba products that are labeled
"Lead(Pb)-Free" are entirely free of lead(Pb).
(5) Toshiba Semiconductor Company defines "RoHS-Compatible" semiconductor
products as products that either (i) contain no more than a maximum
concentration value of 0.1% by weight in homogeneous materials for
lead, mercury, hexavalent chromium, polybrominated biphenyls (PBBs)
and polybrominated diphenyl ethers (PBDEs) and no more than 0.01% by
weight in homogenous materials for cadmium; or (ii) fall within one of
the stated exemptions set forth in the Annex to the RoHS Directive.
(6) Toshiba Semiconductor Company defines the "RoHS Directive" as the
Directive 2002/95/EC of the European Parliament and of the Council of
27 January 2003 on the restriction of the use of certain hazardous
substances in electrical and electronic equipment.
(7) When used herein in relation to memory density, megabit and/or Mb
means 1,024x1,024 = 1,048,576 bits. Usable capacity may be less. For
details, please refer to specifications.
SOURCE Toshiba America Electronic Components, Inc.
Web Site: chips.toshiba.com
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