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Technology Stocks : Applied Materials No-Politics Thread (AMAT)
AMAT 261.90+0.4%Dec 26 9:30 AM EST

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To: niek who wrote (17019)1/5/2006 11:12:16 PM
From: etchmeister  Read Replies (1) of 25522
 
The high density NAND memories, 8 GB and up, are ideal for 45-nm immersion. And the world needs a lot of them, both NAND and immersion of course....

Here you go - two 8 Gb's stacked; I understand Samsung has a 32 Gb flash drive - build it and they will come.
Varian also surpassed 12 month high by a nickel or so

Toshiba rolls 16-Gbit NAND part


EE Times
(01/05/2006 2:52 PM EST)

SAN JOSE, Calif. — Keeping up with rival Samsung Electronics Co. Ltd., Japan’s Toshiba Corp. announced the availability of a 16-gigabit, NAND-based flash memory chip, based on its multi-level cell (MLC) technology.

The part, dubbed the TH58NVG4D4CTG, is said to support 2-gigabytes (GB) of storage by stacking a pair of 8-Gbit chips in a single thin, small-outline package (TSOP).

The new part is ideal for solid-state file storage applications, including audio players, USB drives, memory cards and streaming audio/video equipment.

The part is sampling. It is priced at $79.00 each.
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