Currently, NAND flash costs about $45 per gigabyte; at that price, just the raw memory for a 32-GB drive would cost $1440.
I don't know what their definition is of raw memory; besides within next 18 months we should see transition to 55nm
Toshiba Announces 16-Gigabit Multi-Level Cell NAND Flash Component Using 70-Nanometer Process Technology
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Highest Density Commercially Available MLC NAND Flash Component Provides
2-Gigabyte Data Storage Capacity
See TAEC Memory Products at CES in Toshiba Booths #12814 and #12827 in LVCC
Central Hall
LAS VEGAS, Jan. 5 /PRNewswire/ -- Continuing its commitment to a
leading-edge NAND flash roadmap to enable increasingly high density devices
for consumer applications, Toshiba America Electronic Components, Inc. (TAEC)*
today announced the availability of a 16-gigabit(1) (Gb) multi-level cell
(MLC) NAND flash memory component developed by Toshiba Corp. (Toshiba). The
new 16Gb NAND Flash part, designated TH58NVG4D4CTG, achieves 2 gigabytes(2)
(GB) of storage in a single thin, small-outline package (TSOP) by stacking two
70nm Toshiba 8Gb MLC NAND chips. The new part is ideal for solid-state file
storage applications including audio players, USB drives, memory cards,
streaming audio/video equipment and other applications requiring high-density
embedded memory at an attractive cost per bit.
"Our 16Gb NAND TSOP is based on the Toshiba 8Gb MLC NAND part which
features the industry's highest density in a single die NAND chip, which is
achieved by storing 2 bits per cell. As a result, Toshiba is able to offer
two-gigabyte storage capacity by stacking only 2 die in a TSOP package," said
Brian Kumagai, business development manager, NAND Flash, for TAEC.
The new 16Gb memory part is based on the Toshiba TC58NVG3D4CTG 8Gb MLC
NAND, which maximizes performance by using fast writing circuit techniques to
reduce data write times and supporting a fast write speed of 6-megabytes (MB)
per second(3). The 8Gb NAND chips, co-developed by Toshiba and SanDisk Corp,
are now in full production on 70nm production lines in an advanced wafer
fabrication facility at Toshiba Yokkaichi Works run by Flash Partners, Inc., a
joint venture of Toshiba and SanDisk.
The new parts are offered in Lead(Pb)-Free(4) surface mount packages with
tin-silver (Sn-Ag) or tin-copper (Sn-Cu) Lead(Pb)-Free plating and are
intended to be compatible(5) with the requirements of the European Union's
Restriction of Hazardous Substances (RoHS) Directive(6), which will take
effect in July 2006.
Product Specifications
Part Number TH58NVG4D4CTG
Configuration 2028M x 8 bits (16Gb)
Power Supply VCC = 2.7V to 3.6V
Page Size 2112 bytes
Max. Programming Speed 6MB/Second
Package 48-pin TSOP Type 1
Measures 12 x 20 x 1.2 millimeters
Pricing and Availability
Samples of the 16Gb Toshiba TH58NVG4D4CTG, 16Gb NAND Flash will be
available in January 2006, priced at $79.00 each. |
