actually, i know a little about RMTR already, and i got
into the company thru "infrastructure" column on techweb.
i respect those guys. its a pure spec play on my part.
what i was trying to address was whether or not there are huge
performance differences, e.g. of the sort like EDRAM at 1.6g burst
vs RDRAM at 0.8g burst which i have seen in press releases.
still, RMTR seems to have an uphill battle to get its RAM accepted.
as to FRAM, i found a paper which explained that the ferro
"dielectric" adds much greater durability to the "gate?"
compared to FLASH, but it also noted that FRAM lags by several
generations. given today's press release by intel for their
new 64mb flash part, FRAM is really behind at 1mb density.
see biz.yahoo.com
FRAM also seems to be a long shot, way behind FLASH, which
has the muscle of INTC, AMD and SNDK behind it. btw, just how
many write cycles does it take to destroy a FLASH memory? tens,
hundreds, gazillions? btw, why would the faster read/write
times of FRAM over FLASH matter at all in smartcard applications?
finally, i found a reference to another technology on the horizon
called silicon carbide, a material that would allow the construction
of DRAM cells of such amazingly low leakage, that it is virtually
nonvolatile memory, i.e. it would takes years to leak away..
i'm no EE, but i'm very persistent at getting information, and
i'm hoping to bounce this stuff off the knowledgable...
-rich |
