SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : WDC/Sandisk Corporation
WDC 169.54-0.1%Dec 9 4:00 PM EST

 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext  
From: Bruno Cipolla4/29/2006 5:02:24 AM
  Read Replies (1) of 60323
 
UMC Opens NAND to Fabless Companies
By David Manners -- 4/25/2006
Electronics Weekly
reed-electronics.com
New entrants into NAND flash memory, one of the fastest growing areas of the semiconductor industry, could be enabled by the announcement of a new memory process by UMC, the Taiwanese silicon foundry.

UMC has announced an NROM-type process used for NAND flash as an alternative to the floating gate CMOS process typically used by NAND flash leaders such as Toshiba, SanDisk and Samsung.

“UMC has been working on flash technology for many years for several customers’ flash products, including commodity flash as well as embedded flash/EEPROM,” said Joe Ko, VP of the specialty technology division at UMC.

UMC calls the process SONOS (silicon oxide nitride oxide semiconductor). It is another name for the nitride trapping site storage technology called MNOS (metal nitride oxide semiconductor), developed by Saifun of Israel under the name NROM and used by Spansion and Infineon to make NAND flash memory, which they respectively call Mirrorbit and TwinFlash.

Last year Cypress Semiconductor licensed a SONOS process from Colorado-based Simtek.

UMC has made its first SONOS product, a 256Mbit, 0.18µm chip, for a Taiwanese semiconductor company called Solid State System. According to UMC, the chip boasts cost-competitive manufacturing, lower power consumption, and equivalent program/erase performance and reliability compared to conventional NAND flash.

NROM has traditionally lagged in delivering the same density level as floating gate CMOS, although Saifun recently announced a 4bit-per-cell NROM technology which would solve that.

“As we move this current product line to volume production, we are also working with UMC to develop high capacity SONOS memory products on advanced process technology,” said Cheng Liou, VP of Solid State System.

Assuming UMC’s SONOS process scales reasonably well, a 65nm process could deliver a NAND flash product in the multi-Gbit density range which is in line with current leading edge NAND flash memories.

Electronics Weekly is the London-based sister publication of Electronic News.
Report TOU ViolationShare This Post
 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext