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Technology Stocks : Advanced Micro Devices - Moderated (AMD)
AMD 259.65+2.3%Jan 23 9:30 AM EST

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To: dougSF30 who wrote (196911)5/15/2006 5:29:22 PM
From: combjellyRead Replies (1) of 275872
 
"You don't seem to have any sources that substantiate specific claims like "4 times the risk","

You ever do risk assessment? When you have two risk factors that interact, you multiply the risk, not add them. If you think that gate material and gate insulator don't interact, well...

True, I might be wrong in weighting both with equal risk factors. But I suspect they are pretty close.

Ok Dougie, here is the skinny. If they aren't using novel materials and are sticking with SiO2 for the gate insulator, then they have to be using a thick oxide layer. Because the leakage is because the SiO2 on the gate is approaching a couple of molecules. That is physics, there isn't any way around it. No amount of process magic will change that. But making the gate oxide thicker means it switches slower. That is the tradeoff. So sure, they can reduce leakage to zero. But that means they probably won't break 1 GHz. Wanna bet they choose to go with a 20% faster transistor, which sort of sucks BTW, instead of low power?

Really dougie, you are pretty clueless about this stuff. Do ty to get a clue before playing again.
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