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Technology Stocks : Spansion Inc.
CY 23.820.0%Apr 16 5:00 PM EST

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To: Rink who wrote (304)7/7/2006 10:21:44 AM
From: Rink   of 4590
 
More on Ovonyx's OUM / PCM / PRAM memory:

Volume production of a multigigabit phase change memory is expected to arrive at the 45- or 32-nm node, some time after 2008. eetimes.com

- chalcogenide alloys, typically an alloy of antimony telluride and germanium telluride
- Engineers from both companies are set to outline a 90-nanometer manufacturing node phase-change memory process based on a chalcogenide material storage element with a vertical PNP bipolar junction transistor as the selector device.
- “The small cell area of 12F2, the good electrical results, and the intrinsic reliability demonstrate the viability of the PCM cell concept,”
- programming currents as low as 400-microamps and good distributional data achieved on multi-megabit arrays for set and reset programming, endurance and data retention.
- ST is known to have developed a 128-Mbit large array demonstrator using a 90-nm process and is considering commercial high-volume production of a multigigabit phase change memory at the 45- or 32-nm node (see May 26 story).

Regards,

Rink
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