AMD and IBM Detail Early Results Using Immersion and Ultra Low-K in 45nm Chips
Advanced Technologies Provide Improved Performance and Efficiency While
Reducing Complexity in Microprocessor Design and Manufacturing
SAN FRANCISCO, December 12 /CNW/ - At the International Electron Device
Meeting (IEDM) today, IBM (NYSE: IBM) and AMD (NYSE: AMD) presented papers
describing the use of immersion lithography, ultra-low-K interconnect
dielectrics, and multiple enhanced transistor strain techniques for
application to the 45nm microprocessor process generation. AMD and IBM expect
the first 45nm products using immersion lithography and ultra-low-K
interconnect dielectrics to be available in mid-2008.
"As the first microprocessor manufacturers to announce the use of
immersion lithography and ultra-low-K interconnect dielectrics for the 45nm
technology generation, AMD and IBM continue to blaze a trail of innovation in
microprocessor process technology," said Nick Kepler, vice president of logic
technology development at AMD. "Immersion lithography will allow us to deliver
enhanced microprocessor design definition and manufacturing consistency,
further increasing our ability to deliver industry-leading, highly
sophisticated products to our customers. Ultra-low-K interconnect dielectrics
will further extend our industry-leading microprocessor performance-per-watt
ratio for the benefit of all of our customers. This announcement is another
proof of IBM and AMD's successful research and development collaboration."
Current process technology uses conventional lithography, which has
significant limitations in defining microprocessor designs beyond the 65nm
process technology generation. Immersion lithography uses a transparent liquid
to fill the space between the projection lens of the step-and-repeat
lithography system and the wafer that contains hundreds of microprocessors.
This significant advance in lithography provides increased depth of focus and
improved image fidelity that can improve chip-level performance and
manufacturing efficiency. This immersion technique will give AMD and IBM
manufacturing advantages over competitors that are not able to develop a
production-class immersion lithography process for the introduction of 45nm
microprocessors. For example, the performance of an SRAM cell shows
improvements of approximately 15 per cent due to this enhanced process
capability, without resorting to more costly double-exposure techniques.
In addition, the use of porous, ultra-low-K dielectrics to reduce
interconnect capacitance and wiring delay is a critical step in further
improving microprocessor performance as well as lowering power dissipation.
This advance is enabled through the development of an industry-leading
ultra-low-K process integration that reduces the dielectric constant of the
interconnect dielectric while maintaining the mechanical strength. The
addition of ultra-low-K interconnect provides a 15 per cent reduction in
wiring-related delay as compared to conventional low-K dielectrics.
"The introduction of immersion lithography and ultra-low-K interconnect
dielectrics at 45nm is an early example of the successful transfer of
technology from our ground-breaking research work at the Albany Nanotech
Center to IBM's state-of-the-art 300mm manufacturing and development line at
East Fishkill, New York, as well as AMD's state-of-the-art 300mm manufacturing
line in Dresden, Germany," said Gary Patton, vice president, technology
development at IBM's Semiconductor Research and Development Center. "The
successful integration of leadership technologies with AMD and our partners
demonstrates the strength of our collaborative innovation model."
The continued enhancement of AMD and IBM's transistor strain techniques
has enabled the continued scaling of transistor performance while overcoming
industry-wide, geometry-related scaling issues associated with migrating to
45nm process technologies. In spite of the increased packing density of the
45nm generation transistors, IBM and AMD have demonstrated an 80 per cent
increase in p-channel transistor drive current and a 24 per cent increase in
n-channel transistor drive current compared to unstrained transistors. This
achievement results in the highest CMOS performance reported to date in a 45nm
process technology.
IBM and AMD have been collaborating on the development of next-generation
semiconductor manufacturing technologies since January 2003. In November 2005,
the two companies announced an extension of their joint development efforts
until 2011 covering 32nm and 22nm process technology generations.
About AMD
Advanced Micro Devices (NYSE: AMD) is a leading global provider of
innovative microprocessor solutions for computing, communications and consumer
electronics markets. Founded in 1969, AMD is dedicated to delivering superior
computing solutions based on customer needs that empower users worldwide. For
more information visit www.amd.com.
About IBM
IBM semiconductor technologies are a major contributor to the company's
position as the world's largest information technology company. Its chip
products and solutions power IBM eServer and TotalStorage systems as well as
many of the world's best-known electronics brands. IBM semiconductor
innovations include dual-core microprocessors, copper wiring,
silicon-on-insulator and silicon germanium transistors, strained silicon, and
eFUSE, a technology that enables computer chips to automatically respond to
changing conditions. More information is available at:
ibm.com.
AMD, the AMD Arrow logo, and combinations thereof are trademarks of
Advanced Micro Devices, Inc. Other names are for informational purposes only
and may be trademarks of their respective owners.
For further information: AMD Jon Carvill, (512) 602-0499 (PR)
jon.carvill@amd.com or Mike Haase, 408-749-3124 (IR) or IBM Glen Brandow,
914-766-4615 (PR) brandow@us.ibm.com
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