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Technology Stocks : Intel Corporation (INTC)
INTC 50.59+4.9%Feb 6 9:30 AM EST

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To: Time Traveler who wrote (33514)10/2/1997 10:42:00 AM
From: Jonathan   of 186894
 
John Y. Wang: >I do not believe a K6/233 running at Vcc of 3.2V is over stressed, voltage wise<

I think you maybe right about 3.2 volts is not too bad for K6. I was thinking K6 was using the .25um process, then the gate ox will be only about 50Am. But with .35um process, the gate ox is probably around 80Am thick. However, CPU life will always shorten if higher voltage is used than the process design.

>Perhaps, you meant the extra power dissipated with these flip-chip C4 bump attachment and inadequate chip area or package (Socket 7 to dissipate all this heat --- pushing stress relieves of these bumps to the limit from thermal cycling.<

Actually, I was thinking about the channel hot carrier effect (CHC). I am not an expert of reliabilty study and this is an investment board, so I wont't going into it in great detail. Basically the theory is with higher volts at gate and drain of the transistor, the electrons is accelarated faster acrossed the channel, some of these electron will be lodge or stuck in the bottom gate oxide permanently, creating negative volt at the bottem of the gate oxide. The gate oxide now sees a much larger voltage and tends to break down at those spots.
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