SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : Advanced Micro Devices - Moderated (AMD)
AMD 247.99-4.2%Nov 13 3:59 PM EST

 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext  
To: neolib who wrote (228904)3/25/2007 6:12:37 PM
From: Sarmad Y. HermizRead Replies (1) of 275872
 
>> Did you see the 3D graph of ion distribution in the gate & channel (blue & red dots)? Moving any single atom in there is not going to do anything.

Yes I did. You said 100 atoms. This link, also quoting an IBM person mentions 14 atoms. And I read that Intel's 45 nm has some structures that are 2 atoms thick.

vlsicad.ucsd.edu

"If you look at SiO2; (silicon-dioxide) thicknesses, for example, we're talking about 14 atoms or so in today's high-end processes," says Leon Stok, director of the electronic design business for IBM's Systems and Technology group. "If you're off by one or two atoms, you're suddenly off by 10% or 20%. Before, this wasn't an issue. We think we're seeing the limits of some of the physical phenomena we tend to deal with."

-----------

And this from the link you posted.

Another source of intrinsic device variability arises from atomic-scale oxide thickness variations. Physical gate oxide thickness is currently down to 1 nm, equivalent to approximately five inter-atomic spacings.
Report TOU ViolationShare This Post
 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext