Intel and Micron Sampling Industry-Leading Multi-Level Cell NAND Flash Memory
April 25, 2007
SANTA CLARA, Calif. and BOISE, Idaho --(Business Wire)-- Intel Corporation and Micron Technology, Inc. (NYSE:MU), today announced they are sampling industry-leading 50 nanometer (nm) multi-level cell (MLC) NAND flash memory manufactured by their NAND flash memory joint venture, IM Flash Technologies.
The new MLC NAND flash memory components feature a world-class die and cell size ideally suited for use in today's computing and consumer electronics devices that are increasingly smaller and more efficient themselves. The 50nm MLC technology, sampling at a 16 gigabit (Gb) die density, complements the previously announced 50nm single-level cell (SLC) products that the companies are shipping today at a 4 Gb die density.
The new MLC NAND product caps a year of productive activity in which Intel and Micron have aggressively ramped a state-of-the-art 300 millimeter (mm) flash manufacturing factory network and are in the midst of developing sub-40nm NAND flash memory products.
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"In only one year, Micron and Intel have developed the industry's leading NAND flash memory MLC product and aggressively ramped a factory network that is delivering today for our customers," said Micron Chief Operating Officer Mark Durcan. "We're proud of the accomplishments we're achieving with Intel, and we look forward to more milestones in the next year."
"The progress of our joint venture with Micron to develop industry-leading architecture has surpassed our expectations during this first year," said Randy Wilhelm, Intel vice president and general manager, NAND Products Group. "Intel and Micron were the first in the industry to introduce 50nm SLC NAND samples last July, and developing the industry's most advanced 50nm MLC architecture is a further proof point to the strength of this development and manufacturing relationship."
Along with producing NAND flash out of Micron facilities in Boise, Idaho, and Manassas, Va., the IM Flash joint venture has also been manufacturing wafers since February at a 300mm facility in Lehi, Utah, that is completely dedicated to the joint venture. Additionally, the companies are moving forward on plans to bring a new IM Flash manufacturing facility to Singapore with their recently announced Singapore partnership.
Intel, the world leader in silicon innovation, develops technologies, products and initiatives to continually advance how people work and live. Additional information about Intel is available at www.intel.com/pressroom/.
Micron Technology, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, NAND Flash memory, CMOS image sensors, other semiconductor components, and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron's common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com.
(C)2007 Micron Technology, Inc., and Intel Corporation. All rights reserved. Information is subject to change without notice.
Micron and the Micron logo are trademarks of Micron Technology, Inc. Intel is a trademark of Intel Corporation or its subsidiaries in the United States and other countries. All other trademarks are the property of their respective owners.
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