But don't take my word for it. As of September of 2006:
Full-Bit Functional, High-Density 8 Mbit One Transistor–One Capacitor Ferroelectric Random Access Memory Embedded within a Low-Power 130 nm Logic Process
K. R. Udayakumar*, T. S. Moise, S. R. Summerfelt, K. Boku, K. A. Remack, J. Gertas, A. Haider, Y. Obeng, J. S. Martin, J. Rodriguez, G. Shinn, A. McKerrow, J. Eliason1, R. Bailey1, and G. R. Fox1
Silicon Technology Development, Texas Instruments Inc., 13570 N. Central Expressway, MS-3704, Dallas, TX 75243, U.S.A.
1Ramtron International Corporation, 1850 Ramtron Drive, Colorado Springs, CO 80921, U.S.A.
(Received September 19, 2006; accepted December 23, 2006; published online April 24, 2007)
Abstract:
We report the electrical properties of a full-bit functional 8 Mbit one transitor–one capacitor (1T–1C) embedded ferroelectric random access memory (eFRAM) fabricated within a low-leakage 130 nm 5 lm Cu interconnect complementary metal oxide semiconductor (CMOS) logic process. To increase manufacturability and reliability margins, we have introduced a single-bit substitution methodology that replaces bits at the low-end of the original distribution with redundant elements leading to an increased signal margin. Further, we have fabricated a digital signal processor (DSP) using the eFRAM process flow and have shown that the operating frequency is nearly the same relative to the CMOS baseline. With the development of logic-compatible eFRAM, we have created a technology platform that enables ultra-low-power devices.
jjap.ipap.jp
If TI is going to produce any SoC using embedded FRAM within the next 12 months it will be on their 130nm FRAM manufacturing process. And if the folks at JJAP won't take your plastic, you can reach the same conclusion from this IEEE publication for the incredibly low price of only $19:
csdl2.computer.org
Or... I suppose you could just wait 12 months. I figure Staunton should be about ready to mention an embedded FRAM product from TI by then. <Hoo><Hoo><Haa>
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