Samsung introduces 60nm-class processing for 2Gb DDR2
(at one point something has to give; me thinks copper is finally making its inroads into memory)
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Press release, September 12; Rodney Chan, DIGITIMES [Wednesday 12 September 2007]
Samsung Electronics has announced that it has developed what it claims is the industry's first 60nm-class 2Gb DDR2 and will begin mass producing it later this year.
Compared with 80nm 2Gb DDR2, the 60nm-class with a speed of 800-megabits per second has improved DRAM performance up to 20%. Moreover, production efficiency for the new 2Gb DDR2 will be enhanced by about 40% using the finer 60nm-class process technology.
Besides its greater efficiencies, the new 2Gb DDR2 device will provide twice as much storage capacity over existing system memory solutions, which will accelerate the move toward higher densities in high-end market segments, according to Samsung.
The new high-performance, high-capacity DRAM is well suited for applications in servers, workstations and notebook PCs where operating speed is a major concern.
The 2Gb DDR2 device cuts in half the number of components used in a 1Gb-based 8GB (four-rank) module, which consists of 72 1Gb chips. The new solution consumes approximately 30% less power than a module of the same capacity using 1Gb chips. The lower power level generates less heat, improving reliability and minimizing cooling requirements, noted Samsung.
Samsung can supply the 2Gb DDR2 in four types of modules: 8GB fully-buffered, dual inline memory modules (FBDIMMs); 8GB registered, dual inline memory modules (RDIMMs); 4GB unbuffered, dual inline memory modules (UDIMMs); and 4GB small outline, dual inline memory modules (SODIMMs).
With mass production of the 2Gb DDR2 scheduled to begin by year end, Samsung will have its complete DDR2 product line-up in production at the 60nm-class from 512Mb to 2Gb. Samsung's 1Gb and 512Mb are already being produced using 60nm-class process technology. |
