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From: NightOwl	10/11/2007 8:32:25 AM
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This should explain quite a bit about the previously "assumed" scaling limits for F-RAM: The motion of domain walls is critical to many applications involving ferroelectric materials, such as fast, high-density non-volatile random access memory. In memories of this kind, storing a data bit means increasing the size of one polar region at the expense of another, hence shifting the movement of the domain wall that separates these regions. A better understanding of its behavior may lead to faster, higher-density forms of memory. Experimental measurements of domain growth rates in PbTiO3 and BaTiO3 have been performed, but the development of new materials has been hampered by a lack of microscopic understanding of how domain walls move. Despite some success in interpreting domain-wall motion in terms of classical nucleation and growth models, these models were formulated without insight from first-principles-based calculations and they portray a large, triangular nucleus with unrealistically large depolarization and nucleation energies, inhibiting practical applications of the materials that save and erase memory. physorg.com 0\|0

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