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Politics : RAMTRONIAN's Cache Inn

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To: NightOwl who wrote (13699)11/29/2007 1:16:03 PM
From: NightOwl  Read Replies (1) of 14464
 
As for phase change memory, Cambou stated: "In 2016 maybe it is a good idea, but it will take 10 years before it gets cheap." Some phase change advocates say that the memory could start popping out in the next few years. Then again, the concept of phase change memory has been around since the early '70s.

Handy agrees, to a point. Charge trapping will likely be easier to adopt than phase change or rewritable 3D memory. It's more of an evolutionary step than a rewrite of the cookbook. Big companies have also expressed quite a bit of interest. But whether they will have to pay Spansion is an open question.

"Everybody says ONO is the way we will have to go. Samsung has said they are going to use ONO. The question is whether they are going to be tripping over the (Spansion) patent portfolio," Cambou said.

news.zdnet.co.uk

L'Intel's rational for off-loading the risks and costs of PCRAM become clearer everyday. Spansion appears to have grabbed the brass ring with the Saifun acquisition and the "old" IP looks set to run the table... at least down to 10nm... which is where ferroelectric quantum dots and/or quantum wells should be just about ready to do the right thing.

But by then its all going to depend upon where post CMOS logic will be heading as the "new" sub 10nm memory IP will have to be compatible and easily embeddable. Right now it appears that the logic battle is being fought between competing magnetic and ionic forces. Frankly I don't have a clue as to who's gonna win that one... But so what?

Just about everybody reading this is going to be dead and forgotten by the time that dust settles... except this dang Norrin Radd guy... and maybe two or three other dadgummed optimists... that manage to survive The BIG ROCK Extinction of 2012! <Hoo><Hoo><Haa><ack>

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