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Technology Stocks : Spansion Inc.

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Apr 16 5:00 PM EST

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To: Joe NYC who wrote (2563)	1/3/2008 8:34:31 AM
From: Rink	of 4590

Some more SONOS thoughts and details. Just an additional thought: Why did Spansion announce SONOS-based ORNAND and not SONOS-based Mirrorbit too? My probably premature guess is that SONOS might be used for NOR (currently Mirrorbit) too. Could it be that Spansion plans to Eclipse all NOR/ORNAND solutions to further simplify production and use, or is this too radical a thought? Below a couple more SONOS articles listed to provide some more detail about who is likely to use the technology, and what the material properties are: As posted by someone earlier I believe, Toshiba could well use SONOS somewhere between 32 and 10nm. Some additional tidbits: The new structure sandwiches a 1.2-nm silicon nanocrystals layer between the 1-nm thickness oxide films. Toshiba also increased the saved electrons amount by changing the nitride film from Si3N4 to Si9N10: eetimes.com Toshiba touts 3D SONOS flash raplacement: fabtech.org Macronix and Qimonda to jointly develop flash technologies such as Bandgap Engineered BE-SONOS: digitimes.com Shanghai Hua Hong NEC licensed 130nm SONOS from Cypress: eetimes.com Another explanation of SONOS including the below pic: Matching article: semiconductor.net SONOS cell ~ equal height as CMOS transistor. Contains explanation of why tunnel oxide and charge holding nitride layers can be so thin. Berkeley paper comparing Si3N4 with HfO2 (and ZrO2 and TiO2) for charge trapping layer in SONOS flash memory structures: eecs.berkeley.edu Regards, Rink

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