Can't get to the abstracts yet but it sounds like March may bring a few research pearls from the MRS, e.g.:
8:30 AM *F1.1
High Density Thin Film Ferroelectric Nonvolatile Memories. Ramamoorthy Ramesh, Department of Materials Science & Engineering and Department of Physics, University of California-Berkeley, Berkeley, California.
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11:00 AM F1.7
High-Density Ferroelectric Nanocapacitors Based on Nanowire/CNT Bottom Electrodes and Ferrelectric Nanotubes. Hongjin Fan1, Susumu Kawasaki1, James F Scott1, Paul R Evans2 and John M Gregg2; 1Centre of Ferroics, University of Cambridge, Cambridge, United Kingdom; 2Centre for Nanostructured Media, Queens University Belfast, Belfast, Northern Ireland, United Kingdom.
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11:30 AM F1.9
A Room Temperature Ferroelectric Directly on Silicon. Maitri P. Warusawithana1, Y. Li1, L. -Q Chen1, D. G Schlom1, C. Cen2, C. Sleasman2, J. Levy2, J. C Woicik3, L. F Kourkoutis4, D. A Muller4, J. Klug5, M. Bedzyk5, H. Li6 and L. -P Wang7; 1Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania; 2Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania; 3National Institute of Standards and Technology, Gaithersburg, Maryland; 4School of Applied and Engineering Physics, Cornell University, Ithaca, New York; 5Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois; 6Physical Sciences Research Laboratories, Motorola Laboratories, Tempe, Arizona; 7Intel Corporation, Santa Clara, California.
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F3.3
Cure of a Stress Assisted IrO2 Reduction in Additional Top Electrode ( Ir/IrO2 ) of 180nm, 0.48 um2 Cell, 1T1C, 64Mb FRAM. Doyeon Choi, Song Yi Kim, Hwi San Kim, Seung Kuk Kang, Woo Song Ahn, Joo Young Jung, Han Kyoung Ko, Young Ki Hong, Jai Hyun Kim, Won Woong Chung, Eun Sun Lee, Jin Young Kang, Young Min Kang, Dong Jin Jung, Hyun Ho Kim, Sung Yung Lee and Hong Sik Jeong; Advanced Technology Development Team, Memory Division, Samsung Electronics, Yongin, South Korea.
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9:15 AM F4.3
Nano Dot Manipulation with memory density of above 1 Tbit/inch2 in Ferroelectric Data Storage System. Tanaka Kenkou and Cho Yasuo; Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
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1:30 PM *F8.1
Optimization of Advanced FeRAM Materials and Processes. Carlos A. Paz de Araujo, Symetrix Corp., Colorado Springs, Colorado; Electrical Engineering, University of Colorado, Colorado Springs, Colorado.
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F9.17
Ferroelectric Media For Probe Storage Applications. Simon Buehlmann, Y. K. Kim, S. Hong and S. Oh; Samsung Advanced Institute of Technology, Giheung, South Korea.
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