You can lead a L'Intel to water...
1:30 PM *F8.1
Optimization of Advanced FeRAM Materials and Processes. Carlos A. Paz de Araujo, Symetrix Corp., Colorado Springs, Colorado; Electrical Engineering, University of Colorado, Colorado Springs, Colorado.
Ferroelectric Random Access Memories (FeRAMs) have now achieved nearly 900 million units in sales (including both materials families of PZT and SBT), surpassing every emerging memory technology that have been under research in the last ten years. When high K ferroelectric materials are considered (eg. GaAs MMICs with BST), more than 600 million units are added, bringing Integrated Ferroelectrics to over 1.5 Billion devices in the hands of consumers. In spite of this commercial success and resolution of CMOS compatibility issues that delayed their introduction, the scientific community is still looking for memory technologies such as MRAMs, PCMS, and various forms of molecular devices that seem incapable at the very start to meet the results already enjoyed by FeRAMs. This paper shows that further improvements in FeRAMs for the 65-32 nm era seem to be more plausible as a strategy than to improve materials for devices that cannot even compete with existing FeRAMs. The paper also includes the evolution of capacitive FeRAM into the resistive FeRAMs (ReRAMs based on Ferroelectric materials and d-block oxides in general), a topic worth pursuing as ReRAMs of various types seem to be of resent interest.
mrs.org
But you can only get it to drink in little tiny nano sips... at room temperatures... for 3 days:
11:30 AM F1.9
A Room Temperature Ferroelectric Directly on Silicon. Maitri P. Warusawithana1, Y. Li1, L. -Q Chen1, D. G Schlom1, C. Cen2, C. Sleasman2, J. Levy2, J. C Woicik3, L. F Kourkoutis4, D. A Muller4, J. Klug5, M. Bedzyk5, H. Li6 and L. -P Wang7; 1Department of Materials Science and Engineering, Penn State University, University Park, Pennsylvania; 2Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania; 3National Institute of Standards and Technology, Gaithersburg, Maryland; 4School of Applied and Engineering Physics, Cornell University, Ithaca, New York; 5Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois; 6Physical Sciences Research Laboratories, Motorola Laboratories, Tempe, Arizona; 7Intel Corporation, Santa Clara, California.
With the growing need for faster and better devices, limitations with silicon based traditional electronics are becoming increasingly more apparent. This has led to the desire to interface functional materials with semiconductors and specifically with silicon to obtain new and more efficient devices. Towards this, the growth of epitaxial oxide thin films on silicon has attracted much attention. With the variety of different collective phenomena that can be achieved in complex oxides, the integration of such materials with silicon could lead to novel devices that take advantage of the properties of both the semiconductor and the functional oxide. The tendency of a pristine silicon surface to rapidly form its oxide as well as the reactivity of silicon with many elements and their oxides, however, has made this a daunting task. The epitaxial growth of SrTiO3 on (001) Si has been studied for many years. With a carefully controlled growth process1, we obtain completely strained (i.e., commensurate) SrTiO3 thin films on (001) Si. While cross sectional transmission electron microscopy shows that there is no interfacial SiO2 layer in the SrTiO3 on (001) Si films we studied, synchrotron x-ray measurements showed that the films are fully strained to a thickness of ~24Å (6 unit cells of SrTiO3). Theoretical calculations show that the substrate induced biaxial strain leads to ferroelectricity in the quantum paraelectric SrTiO3 when grown on (001) Si. Using Piezo Force Microscopy measurements, we show that these ultra thin SrTiO3 films are indeed ferroelectric. We find that a 6 unit cell thick SrTiO3 film on (001) Si is ferroelectric at temperatures above 80°C while at room temperature, the ferroelectric domains retain their polarity for periods extending over more than 3 days. 1 H. Li et al., J. Appl. Phys. 93 (2003) 4521.
Then they always run off and burn billions of your dollars trying to make "Numonyx" out of a sows ear... I believe this is a genetic aberration brought on by the tainted water supply in Santa Clausa, California. Maybe if they move further north to Berkeley it might correct itself:
8:30 AM *F1.1
High Density Thin Film Ferroelectric Nonvolatile Memories. Ramamoorthy Ramesh, Department of Materials Science & Engineering and Department of Physics, University of California-Berkeley, Berkeley, California.
The field of ferroelectric nonvolatile memories has made some dramatic progress over the past 5 years. Although the field formally started in the early eighties, it was not until the late eighties and early nineties that a concerted, interdisciplinary approach was taken to solve the critical “show-stoppers” that limited their implementation as the next generation of solid state nonvolatile memories ( FRAMS). Among the key inventions, the use of conducting oxide electrodes to solve polarization fatigue and imprint in PZT based capacitors, the implementation of the SBT process, conducting barriers to create high density architectures, approaches to solve hydrogen damage, etc all have paved the way to the current status of this field. Many large companies are actively involved in designing and manufacturing low and high density IC’s that have been implemented in many applications. In this presentation, I will describe our efforts on exploring a new lead-free ferroelectric material, BiFeO3, as a possible replacement for both PZT and SBT families of ferroelectrics.
But then again... its probably just a phase it's going through... <vbg>
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