RAMTRONIAN's Cache Inn Message Board

STOCKTALK

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor. We ask that you disable ad blocking while on Silicon Investor in the best interests of our community. If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.

Politics : RAMTRONIAN's Cache Inn

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next

From: NightOwl	3/27/2008 10:06:58 PM
	of 14464

Graphene could replace silicon in semiconductors, university says Researchers at the University of Maryland have found that electrons travel more than 100 times faster in graphene than in silicon. By Ann Steffora Mutschler, Senior Editor -- Electronic News, 3/26/2008 Physicists at the University of Maryland have found that graphene holds great promise for replacing conventional semiconductor materials, such as silicon, in applications ranging from high-speed computer chips to biochemical sensors thanks to the intrinsic limit to the mobility of the material. The intrinsic limit of the mobility of a material measures how well a material conducts electricity, and graphene, which is a single-atom-thick sheet of graphite, has shown to be higher than any other known material at room temperature. A team of researchers led by physics professor Michael S. Fuhrer of the university's Center for Nanophysics and Advanced Materials, and the Maryland NanoCenter explained that the findings are the first measurement of the effect of thermal vibrations on the conduction of electrons in graphene, which show that thermal vibrations have an extraordinarily small effect on the electrons in graphene. *** edn.com Ferroelectrics are generally compatible with this IP. 0\|0

Report TOU Violation

Share This Post

Public Reply Prvt Reply Mark as Last Read File

Previous 10 Next 10 Previous Next