SI
SI
discoversearch

We've detected that you're using an ad content blocking browser plug-in or feature. Ads provide a critical source of revenue to the continued operation of Silicon Investor.  We ask that you disable ad blocking while on Silicon Investor in the best interests of our community.  If you are not using an ad blocker but are still receiving this message, make sure your browser's tracking protection is set to the 'standard' level.
Technology Stocks : Spansion Inc.
CY 23.820.0%Apr 16 5:00 PM EST

 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext  
To: KeithDust2000 who wrote (3746)4/4/2008 5:15:47 PM
From: BUGGI-WO  Read Replies (1) of 4590
 
@Keith
"
I wonder what SPSN has to say about Numonyx´ early(ier) 45nm transition.
"

I know its hard (unavailable) to get final data, but I really
wanted to know the 45nm Floating Gate and/or PCM Die-size.
So, for them, a shrink will ALWAYS help - thats clear, but
I'm interested to know, how products will compare to each
other also when we compare different nodes. I think you
understood, what I wanted to say here.

As stated earlier, I don't think that PCM will cause any
headaches for us, because the DIE is so huge. Even if they
go to 45nm, these DIEs will be roughly on par with 90nm
SPSN Mirrorbit DIEs from what we know so far. And we haven't
spoken about yields, which are major for SPSN but not for
Intel. I really don't know, how 45nm on 200mm and Floating
Gate will look for them. Don't know DIE sizes and process
parameters. We will never know that - for sure (sadly).

So, when I speak about the process (nm), I want to compare
it to the AMD-Intel CPU situation -> process is one thing,
but how large is your final design and what are the SPECs
doing? These are the KEY points. For DRAM we know, that
differences are really small when we use the same 6F or 8F
cell size, the (nearly) same will happen in the NAND space,
but for NOR?

BUGGI
Report TOU ViolationShare This Post
 Public ReplyPrvt ReplyMark as Last ReadFilePrevious 10Next 10PreviousNext