VLSI Symp development from Samsung:
10.4 - 2:45 p.m.
An Endurance-Free Ferroelectric Random Access Memory as a Non-volatile RAM, D.J. Jung, W.S. Ahn, Y.K. Hong, H.H. Kim, Y.M. Kang, J.Y. Kang, E.S. Lee, H.K. Ko, S.Y. Kim, W.W. Jung, J.H. Kim, S.K. Kang, J.Y. Jung, H.S. Kim, D.Y. Choi, S.Y. Lee, K.H. A, C. Wei, H.S. Jeong, Samsung Electronics Co., Korea
We demonstrate endurance characteristics of a 1T1C, 64 Mb FRAM in a real-time operational situation. To explore endurance properties in address access time tAA of 100 ns, we establish a measurement set-up that covers asymmetric pulse-chains corresponding to D1- and D0-READ/RESTORE/WRITE over a frequency range from 1.0 to 7.7 MHz. What has been achieved is that endurance cycles approximate 5.9 x 1024 of cycle times in an operational condition of VDD = 2.0 V and 85 oC in the developed 64 Mb FRAM. Donor concentration due to build-up of oxygen vacancy in a ferroelectric film has also been evaluated to 2.3 x 1020 cm-3 from I-V-t measurements.
vlsisymposium.org
0|0 |
