LG Semicon unveils 133-MHz SDRAM
SEOUL--LG Semicon here today announced the development of the world's fastest 16-Mbit Synchronous DRAM, which has column address access time of less than 16 nanoseconds--approximately twice as fast as current SDRAMs, according to the Korean chip maker.
The fifth-generation SDRAM will be placed into production in the fourth quarter this year and LG Semicon said it expects to see its fast memory chip used in computer systems early next year.
"LGS technological advantages in SDRAM development will deliver increased operating efficiency and performance at a lower cost to customers," said C.H. Mun, vice chairman of LG Semicon. "Our engineers utilized both the 0.25-micron design rule and thin film processing technology to develop this superior product. We achieved a 21% reduction in operating power consumption, and 37% shrinkage in chip size, meaning we'll fit 60% more chips on each wafer."
LG Semicon predicted that its fifth-generation 16-Mbit SDRAM will be the first one with a column address access time of 16 ns when Intel Corp. and major PC makers begin installing SDRAM as main memory for 100-MHz PCs in the first quarter 1998. "With this early lead, we feel confident to win an 18% market share for 133 MHz 16-Mbit SDRAM in 1998," Mun said.
The 16-Mbit SDRAM will operate at 133-MHz., reducing the speed gap between high-end central processors and main memory subsystems.
In addition to computer use, LG Semicon believes its new SDRSM will be suitable for consumer products requiring high-speed memory. The company estimated that the worldwide 16-Mbit SDRAM market in 1998 will reach 1.3 billion chips, which would be 70% of the total 16-Mbit DRAM market. LG Semicon believes 133-MHz memories will win a 50% share of the 16-Mbit SDRAM category. |
