this sounds good
DANBURY, Conn.--(BUSINESS WIRE)--Oct. 20, 1997--
Non-Volatile High Density Ferroelectric Memories Targeted
Advanced Technology Materials, Inc. (NASDAQ: ATMI; temporarily
ATMID), today announced the formation of a new, joint development
program with Texas Instruments (TI) to develop high density non-
volatile memory technology.
Under the research and development program, TI and ATMI will
explore process technology for the fabrication of ferroelectric
memories, leveraging integration work from their recently completed
"DRAM Consortium" with IBM, Micron Technology, and Varian. Unlike
typical volatile memory -- like that used in personal computers,
which must be refreshed constantly to hold information --
non-volatile memories retain data even when power is shut off.
"ATMI's new division -- code named "NovaChip" -- intends to use
ferroelectric memory to revolutionize the performance of its smart
card integrated circuits (ICs). Our unique technology can reduce
power needs, accelerate speed, and unify the different memory types
in today's products," said Dr. Peter Kirlin, ATMI Executive
Vice-President. "Smart card ICs are representative of the general
class of embedded applications such as programmable micro-controllers
and radio frequency identification ICs -- where this memory
technology could have significant impact."
ATMI and TI will investigate the appropriateness of chemical
vapor deposition lead zirconium titanate films for possible
implementation in the conventional, industry standard
one-transistor, one capacitor (1T/1C) cell architecture appropriate
for high density/small cell size applications. Program goals
include operation below 2 volts -- compared with typical memory today
requiring 3 to 5 volts -- with reliability beyond 1 trillion cycles.
Memories with these characteristics would be ideal for cell phones,
personal digital assistants (PDAs), and other hand-held devices.
Non-volatile ferroelectric memory currently offered uses a
non-standard, lower density format.
Peter VanBuskirk, Director of NovaChip Research and Development
said, "We will leverage the results from our recently completed DRAM
program to accelerate high density ferroelectric memory technology
development. Our technology contrasts with current commercial
ferroelectric memories which are available only in low densities,
based on the less efficient 2T/2C capacitor-over-field-oxide cell."
ATMI recently completed work as the leader of the "DRAM
Consortium," with members IBM, Texas Instruments, Micron Technology,
and Varian Associates. The Consortium successfully developed novel
materials for 1 gigabit DRAM chips.
ATMI is a leading developer of advanced semiconductor materials
technology and environmental equipment. ATMI's "NovaChip" Division
is a supplier of smart card ICs. |
