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Technology Stocks : The New (Profitable) Ramtron
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From: jimtracker18/22/2009 4:45:51 PM
   of 647
 
Researchers boost DRAM possibilities Find News


August 21, 2009

Scientists at the Semiconductor Research Corporation and Yale University have developed a new dynamic random access memory (DRAM) cell which uses ferroelectric layers to eliminate the need for a capacitor.

The devices usually contain a storage component such as a capacitor but the ferroelectric layer in the new FeDRAM cell allows it to act more like a complementary metal-oxide semiconductor transistor.

According to Electronics News, the cell is smaller in size due to the lack of capacitor and also features a simpler design, lower power consumption and the possibility of storing multiple bits per cell.

Professor TP Ma from Yale University told the news provider: "There have been numerous research groups that have worked on similar ferroelectric device structures for non-volatile memory applications, but we believe this is the first innovative FeDRAM solution to an industry-wide problem."

Computing giant Intel recently released a new range of solid-state flash memory drives which are 32 nanometres in size.

Rapid Electronics is a leading UK supplier of electronic components, electrical products and industrial equipment to the Assembly Manufacturer sector.

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