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Technology Stocks : AMD:News, Press Releases and Information Only!
AMD 203.14-0.8%Jan 9 9:30 AM EST

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To: Maxwell who wrote (1900)11/3/1997 5:38:00 PM
From: Yousef  Read Replies (1) of 6843
 
Maxwell,

Re: "Perhaps you can explain to me why the shorter gate
length (not the gate width) is so important in determine the speed ..."

Maybe we are just confusing "terms" ... the standard term for talking
about the distance from the source to the drain is "gate length" ...
the term for talking about distance across (island edge to island edge)
is "gate width.

As gate length gets shorter, the Idsat of the FET increases. But by
shortening the gate length, the breakdown voltage can decrease and off
currents will increase. I am still interested in your friend's comparison
between Intel and AMD on final physical gate length.

In regards to "nitride spacers", my data shows Idsat increasing (particularly
for the PMOS device), Source/Drain resistance decrease and longer HCI
lifetimes. I have not measured any type of trapped charge. There are
some very high temperature (short time 30sec) anneals after spacer
formation that could alleviate any charge trapping in the nitride.
The other advantage to nitride spacers is that with oxide spacers, I
am always worried about my final spacer thickness due to losses in
furnace cleans, pre-clean for Ti dep ... with the nithride spacer, this
thickness is very well controlled with almost NO loss with further processing.

It will be interesting to see what your friend says. This might be
something that AMD should look at (nitride spacers).

Always good to talk to you, Maxwell.

Yousef
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