Applied Materials No-Politics Thread (AMAT) Message Board

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Technology Stocks : Applied Materials No-Politics Thread (AMAT)

AMAT 249.89

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Nov 26 3:59 PM EST

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To: Sun Tzu who wrote (24800)	12/16/2010 5:56:02 PM
From: etchmeister	of 25522

First, there is no IP that relates to knowledge you have gained regarding how to run a business. I never said that - I referred to specific IP that relates to etch and CVD - not in regards to "how to run a business". The law in Europe says that you cannot patent what is known to the public and US patent proceedings are a matter of public record. That sounds like catch 22 Invented by Philips; I understand every chip maker using this isolation technology had to pay royalties to Philips - just like Samsung is paying SNDK for MLC; Samsung also pays Rambus I understand. Method for forming recessed dielectric isolation with a minimized "bird's beak" problem United States Patent 3961999 In the fabrication of integrated circuits, a method is provided for forming recessed silicon dioxide isolation in integrated circuits in which the "bird's beak" problems associated with conventional silicon dioxide-silicon nitride composite masking structures is minimized. A conventional composite mask comprising a bottom layer of silicon dioxide and an upper layer of silicon nitride having a plurality of openings defining the regions in the silicon substrate which are to be thermally oxidized is formed on a silicon substrate. Recesses are then etched in the silicon substrate in registration with the openings in the composite mask. Then, the silicon dioxide layer is, in effect, over-etched to extend the openings in the silicon dioxide to greater lateral dimensions than the openings in the silicon nitride layer whereby the silicon nitride at the periphery of the openings is undercut. A layer of silicon is then deposited in the recesses covering the undercut portions of said silicon nitride layer. Then, the structure subjected to thermal oxidation whereby the silicon in and abutting the recesses is oxidized to form regions of recessed silicon dioxide substantially coplanar with the unrecessed portions of the silicon substrate. Because of the undercutting and the deposition of silicon in the recesses, the "bird's beak" effect is minimized.

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