* Multipatterning litho schemes driving etch. After prolonged tinkering with multiple patterning (double and more) litho schemes, the industry should finally start truly adopting this technology in 2H11 and 2012. To this end, look for etch to increase as a percentage of wafer fab equipment spending, Muse notes.
(IMF is Lam's backdoor in to "Inhell" aka INTC)
* April 14, 2011 03:24pm EST
* 0 Comments
Intel, Micron Introduce 20nm Flash Process
Matt Murray By Matthew Murray
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Intel, Micron Introduce 20nm Flash Process
Intel and Micron today introduced a new 20-nanometer (nm) process technology for manufacturing NAND flash memory. This process produces an 8GB, multi-level cell (MLC) NAND flash device, intended for use in smartphones, tablets, solid-state drives (SSDs), and other small-form-factor consumer and compute devices.
The two companies claim the new process is the industry's smallest and most advanced. In January 2010, they began using a 25nm process, which at that point was a first as well.
Measuring 118mm2, the new 20nm flash device also allows for a reduction in board space of between 30 and 40 percent (depending on package type), while maintaining similar performance and endurance characteristics, compared to the existing 8GB 25nm device.
The device will be produced by the companies' joint venture, IM Flash Technologies. According to an Intel-Micron press release, shrinking NAND lithography in this way is the most cost-effective method for increasing the output of fabs, in this case providing about 50 percent more gigabyte capacity from the same factories compared to current 25nm technology.
Tom Rampone, vice president and general manager of Intel's Non-Volatile Memory Solutions Group, said in a statement, "Our goal is to enable instant, affordable access to the world's information. Industry-leading NAND gives Intel the ability to provide the highest quality and most cost-effective solutions to our customers, generation after generation. The Intel-Micron joint venture is a model for the manufacturing industry as we continue to lead the industry in process technology and make quick transitions of our entire fab network to smaller and smaller lithographies."
Intel and Micron's 8GB 20nm device is sampling now; the companies expect it to enter mass production in the second half of 2011. A new 16GB device the companies intend to introduce at that time will make it possible to fit 128GB of NAND flash storage into a device smaller than a typical United States postage stamp. |
