Oh, for heavens' sake, I don't know why we are belaboring this, but -- this is what the first article says: "Samsung expects to crank out 10,000 12-inch 20nm-class NAND flash memory chip wafers every month. Starting next year, the memory chip maker will look to produce 10nm-class memory chip wafers." It doesn't say "initial run." It also incorporates Samsung-speak--when they say "20nm" they actually mean 2xnm; at least, the last time I heard, they were producing at 25 or 26, I forget offhand which.
And in the first paragraph, the article seems to imply that they are also producing DRAM at the plant:
According to Samsung, Line-16 is the industry's largest memory fab in the world. Samsung wasted no time in putting its plant to use and has already started mass producing the industry's first 20nm-class DDR3 memory modules. "The global semiconductor industry is in a period of fierce cyclical volatility, so the opening of this new memory fab and the start of mass production of the world's first 20nm-class DRAM are important milestones to reinforce Samsung's industry leadership," said Kun-hee Lee, Chairman of Samsung Electronics.
It isn't definitive, but as I said it seems to imply it. |