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Politics : Formerly About Advanced Micro Devices
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To: Time Traveler who wrote (26486)12/5/1997 3:22:00 PM
From: Yousef  Read Replies (1) of 1572630
 
John,

Re: "Are you saying the thickness of this oxide is different between the
core and the non-core in K6?"

No, the gate oxide thickness is the same for the core and periphery (Pads).
The real issue is Hot Carrier Injection (HCI). HCI is a condition where
carriers (electrons in NFET) are accelerated by the electric field applied
from source to drain. These accelerated carriers obtain enough energy to
be trapped in the gate oxide. This trapping of "Hot Electrons" causes
the device to shift its threshold voltage. This shift in Vt will reduce
NFET Idsat and thus slow down the CPU. This is the primary reliability
issue that I am concerned about with raising the supply voltage.

Make It So,
Yousef
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