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From: Sam8/21/2018 8:16:11 AM
   of 4828
 
3D NAND Flash Wars Begin
Market overcrowding, more efficient manufacturing, and growing list of scaling issues create a challenging competitive landscape.
August 20th, 2018 - By: Mark LaPedus
semiengineering.com

3D NAND suppliers are gearing up for a new battle amid a period of price and competitive pressures, racing each other to the next technology generations.

Competition is intensifying as a new player enters the 3D NAND market—China’s Yangtze Memory Technologies Co. (YMTC). Backed by billions of dollars in funding from the Chinese government, YMTC recently introduced its first 3D NAND technology. The move is fueling concerns that a new entrant could impact a deteriorating market. The 3D NAND business is heading toward a prolonged period of oversupply and price erosion.

3D NAND is the successor to today’s planar NAND flash memory, and is used for storage applications such as smartphones and solid-state storage drives (SSDs). Unlike planar NAND, which is a 2D structure, 3D NAND resembles a vertical skyscraper in which horizontal layers of memory cells are stacked and then connected using tiny vertical channels.


Fig. 1: 2D NAND architecture. Source: Western Digital.


Fig. 2: 3D NAND architecture. Source: Western Digital

3D NAND is quantified by the number of layers stacked in a device. As more layers are added, the bit density increases. Today, 3D NAND suppliers are shipping 64-layer devices, although they are now ramping up the next technology generation, which has 96 layers. And behind the scenes vendors are racing to develop and ship the next iteration, 128-layer products, by mid-2019, analysts said.

continues at semiengineering.com
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