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From: Sam2/23/2019 6:19:25 PM
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Intel STT-MRAM Technology Is Ready for Mass Production
by Lucian Armasu February 21, 2019 at 12:26 PM

At the International Solid-State Circuits Conference Tuesday, Intel revealed that spin-transferable torque magnetoresistive RAM (STT-MRAM) technology is ready for mass production. The company is expected to use its old but reliable 22FFL FinFET process to manufacture the memory chips, as reported today by EE Times. Intel’s STT-MRAM Technology Due to its high endurance and strong retention, STT-MRAM can be a future alternative to embedded SRAM and NAND flash technologies. EE Times' report cites Ligiong Wei, an Intel engineer who presented the technology, saying the 22nm embedded MRAM technology has a high yield rate of over 99.9 percent. This high yield rate is likely enabled by the MRAM’s simple design, which leaves little room for error and defects.

The technology also promises write endurance of more than 1E06 (1 million) cycles and read disturb error rate of more than 1E12 (a trillion) cycles, according to Wei.

However, for now it looks like Intel is preparing to manufacture STT-MRAM chips that have a capacity of only 7Mb, so it could be a while before we see it used in storage products.

continues at tomshardware.com
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